EPROM Datasheet, 16K EPROM Datasheet, buy MF1 NMOS uv EPROM: 8kx8. x 8 ORGANIZATION mW Max ACTIVE POWER, mW Max Details, datasheet, quote on part number: MF1. The NTE is a 16,–bit ( x 8–bit) Erasable and Electrically . After erasure and reprogramming of the EPROM, it is recommended that the quartz.
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The transparent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern. The MME to be erased should be placed 1 inch away from the lamp and no filters should be used. In- complete erasure will cause symptoms that dayasheet be misleading. Extended expo- sure to room level fluorescent lighting will also cause erasure. Program Inhibit Mode The program inhibit mode allows programming several MMES simultaneously with different data for each one by controlling which ones receive the program pulse.
When a lamp is changed, the distance is changed, or the lamp is aged, the system should be checked to make certain full erasure is occurring. The programming sequence is: The table of “Electrical Characteristics” provides conditions for actual datashwet operation. Direct sunlight any intense light can cause temporary functional fail- ure due 27716 generation of photo current.
It is epro, that the MME be kept out of direct sunlight. An erasure system should be calibrated periodically. Except for “Operating Temperature Range” they are not meant to imply that the devices should be operated at these limits.
Programmers, components, and system designs have been erroneously suspected when incom- plete erasure was the basic problem.
A new pattern can then be written into the device by following the programming procedure.
Full text of “IC Datasheet: EPROM – 1”
These are shown in Table I. Capacitance Is guaranteed by periodic testing. After the address and data signals are stable the program pin is pulsed from VI L to VIH with a pulse width between 45 ms and 55 ms.
Search the history of over billion web pages on the Internet. MMES may be programmed in parallel with the same data in this mode. Table II shows the 3 programming modes. Any or all of the 8 bits associated with an address location may be programmed wFth a single program pulse applied to the chip enable pin. The UV content of sunlight may cause a partial erasure of some bits in a relatively short period of time.
2716 – 2716 16K EPROM Datasheet
All input voltage levels, including the program pulse on chip-enable are TTL compatible. Typical conditions are for operation at: Program Verify Adtasheet The programming of the MME may be verified either 1 word at a time during the programming as shown in the timing diagram or by reading all of the words out at the end of the programming sequence.
Transition times S 20 ns unless noted otherwise. The erasure time is increased by the square of the distance if the distance is doubled the erasure time goes up by a factor of 4.
All bits will be at a “1” level output high in this initial state and after any full erasure.
All similar inputs of the MME may be par- alleled. No pins should be left open.
EPROM Technical Data
This exposure discharges the floating gate to its initial state through induced photo current. The distance from lamp to unit should be maintained at 1 inch. To prevent damage the device it must not be inserted into a board with power applied. Lamps lose intensity as eprok age.
The MME is packaged in a pin dual-in-line package with transparent lid. An opaque coating paint, tape, label, etc. This is done 8 bits a byte at a time. Multiple pulses are not needed but will not cause device damage. Full text of ” IC Datasheet: Any individual address, a sequence of addresses, or addresses chosen at dahasheet may be programmed.